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Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com
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Cautions
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2SK2393
Silicon N-Channel MOS FET
ADE-208-1357 (Z) 1st. Edition Mar. 2001 Application
High voltage / High speed power switching
Features
* * * * * Low on-resistance, High breakdown voltage High speed switching Low Drive Current No Secondary Breakdown Suitable for Switching regulator, Motor Control
Outline
TO-3PL
D G
1
2
3
S
1. Gate 2. Drain (Flange) 3. Source
2SK2393
Absolute Maximum Ratings (Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW 10 s, duty cycle 1 % 2. Value at Tc = 25 C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg
2 1
Ratings 1500 20 8 20 8 200 150 -55 to +150
Unit V V A A A W C C
Electrical Characteristics (Ta = 25C)
Item Drain to source breakdown voltage Gate to source leak current Symbol V(BR)DSS I GSS Min 1500 -- -- 2.0 -- 1.8 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- 1.9 3.0 4370 560 200 75 180 260 125 0.9 6.5 Max -- 1 500 4.0 2.8 -- -- -- -- -- -- -- -- -- -- S pF pF pF ns ns ns ns V s I F = 8 A, VGS = 0 I F = 8 A, VGS = 0, diF / dt = 100 A / s Unit V A A V Test Conditions I D = 10 mA, VGS = 0*1 VGS = 20 V, VDS = 0 VDS = 1200 V, VGS = 0 I D = 1 mA, VDS = 10 V ID = 4 A VGS = 15 V*1 ID = 4 A VDS = 20 V*1 VDS = 10 V VGS = 0 f = 1 MHz ID = 4 A VGS = 10 V RL = 7.5
Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse Test VGS(off) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr
2SK2393
Power vs. Temperature Derating 400 Pch (W) I D (A) 100 30 10 3
DC
Maximum Safe Operation Area
300
10
PW
Op era
10
0
s
Channel Dissipation
Drain Current
200
=1
1m
0m
s
s
100
0.3
s( tio Operation in 1s n( ho this area is Tc 1 t) =2 limited by R DS(on) 5 C)
0
50
100
150 Tc (C)
200
Case Temperature
0.1 Ta = 25 C 20 50 100 200 500 1000 2000 Drain to Source Voltage V DS (V)
Typical Output Characteristics 10 Pulse Test I D (A) (A) 8 15 V 10 V 8V 6 7V 4 5
Typical Transfer Characteristics V DS = 10 V Pulse Test
ID Drain Current
Drain Current
3
4 6V 2 VGS = 5 V 0 10 20 30 Drain to Source Voltage 40 50 V DS (V)
2
Tc = 75C
25C -25C
1
0
2 4 6 Gate to Source Voltage
8 10 V GS (V)
2SK2393
Drain to Source Saturation Voltage vs. Gate to Source Voltage V DS(on) (V) Pulse Test Drain to Source On State Resistance R DS(on) ( ) 20 Static Drain to Source on State Resistance vs. Drain Current 20 Pulse Test 10 5 VGS = 10 V 15 V 1 0.5 0.2 0.1
16
Drain to Source Voltage
12 ID=5A 8 2A 1A 0 4 8 12 Gate to Source Voltage 16 20 V GS (V)
2
4
0.3
1 3 Drain Current
10 30 I D (A)
100
Static Drain to Source on State Resistance R DS(on) ( )
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance vs. Temperature 5 ID=5A Pulse Test 4 2A 1A 3 V GS = 15 V
Forward Transfer Admittance vs. Drain Current 10 5 Tc = -25 C 2 25 C 1 0.5 75 C
2
1
0.2 0.1 0.1
V DS = 20 V Pulse Test 0.2 0.5 1 2 5 10
0 -40
0 40 80 120 160 Case Temperature Tc (C)
Drain Current I D (A)
2SK2393
Body to Drain Diode Reverse Recovery Time 50 Reverse Recovery Time trr (s) Capacitance C (pF) Typical Capacitance vs. Drain to Source Voltage
10000
Ciss 20 10 5 2 1 0.5 0.1 di/dt = 100 A/s V GS = 0, Ta = 25C 0.3 1 Reverse Drain Current 3 10 I DR (A) 3000 1000 Coss 300 100 30 10 0 Crss
VGS = 0 f = 1 MHz 10 20 30 40 50
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics V DS (V) ID=8A
800
V GS (V)
1000
20
2000 1000 Switching Time t (ns) 500
Switching Characteristics V GS = 10 V, V DD = 30 V PW = 5 s, duty < 1 % t d(off) tf tr t d(on)
16 VDS V DD = 250 V 400 V 600 V
Drain to Source Voltage
600
VGS
12
Gate to Source Voltage
200 100 50
400
8
200
V DD = 250 V 400 V 600 V 80 40 120 160 Gate Charge Qg (nc)
4 0 200
0
20 0.1
0.2
0.5 1 Drain Current
2 5 I D (A)
10
2SK2393
Reverse Drain Current vs. Source to Drain Voltage 10 Reverse Drain Current I DR (A) Pulse Test 10 V 5V
8
6
V GS = 0, -5 V
4
2
0
0.2
0.4
0.6
0.8 V SD (V)
1.0
Source to Drain Voltage
Switching Time Test Circuit Vin Monitor D.U.T. RL Vin Vin 10 V 50 V DD = 30 V Vout 10% 10% Vout Monitor
Waveform
90%
10% 90% td(off) tf
90% td(on) tr
2SK2393
Package Dimensions As of January, 2001
Unit: mm
6.0 0.2 20.0 0.3 3.3 0.2 5.0 0.2
26.0 0.3
20.0 0.6 2.5 0.3
1.4 3.0 2.2 1.2 +0.25 -0.1 5.45 0.5 1.0 0.6 +0.25 -0.1 2.8 0.2
5.45 0.5
3.8 7.4
Hitachi Code JEDEC EIAJ Mass (reference value)
TO-3PL -- -- 9.9 g
2SK2393
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica Europe Asia Japan
: : : :
http://semiconductor.hitachi.com/ http://www.hitachi-eu.com/hel/ecg http://sicapac.hitachi-asia.com http://www.hitachi.co.jp/Sicd/indx.htm
Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00, Singapore 049318 Tel : <65>-538-6533/538-8577 Fax : <65>-538-6933/538-3877 URL : http://www.hitachi.com.sg Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road, Hung-Kuo Building, Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon, Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://www.hitachi.com.hk
For further information write to:
Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic Components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585160
Copyright (c) Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
Colophon 2.0
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